Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Output Power
- 40 W
- Part Aliases
- QPD1004
- Kılıf / Paket
- DFN-8
- Gain
- 20.8 dB
- Development Kit
- QPD1004EVB1
- Transistor Type
- HEMT
- Pd Power Dissipation
- 27.6 W
- RoHS
- Details
- Transistor Polarity
- N-Channel
- Vds Drainsource Breakdown Voltage
- 50 V
- Montaj Stili
- SMD/SMT
- Minimum Operating Temperature
- - 40 C
- Moisture Sensitive
- Yes
- Vgs Gatesource Breakdown Voltage
- 145 V
- Fabrika Paket Adedi
- 100
- Ambalaj
- MouseReel
- Maks. Çalışma Sıcaklığı
- + 85 C
- Id Continuous Drain Current
- 3.6 A
- Maximum Drain Gate Voltage
- 55 V
- Birim Ağırlık
- 0.162567 oz
- Operating Frequency
- 30 MHz to 1200 MHz
- Seri
- QPD1004
Related Products
In Stock
Microsemi
0150SC-1250M
JFETs Transistors
Central Semiconductor Corp
2N2608
JFETs Transistors
In Stock
Microchip Technology
2N2608UB
JFETs Transistors
In Stock
Microchip Technology
2N2608UB/TR
JFETs Transistors
Microsemi Corporation
2N2609
JFETs Transistors
In Stock
Vishay
2N3819
JFETs Transistors
In Stock
Central Semiconductor
2N3819 APM PBFREE
JFETs Transistors
In Stock
Rochester Electronics
2N3819_Q
JFETs Transistors