Volume pricing
- 1+ pcs$1.00
- 10+ pcs$1.00
- 25+ pcs$1.00
- 50+ pcs$1.00
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS
- Details
- Transistor Polarity
- N-Channel
- Pd Power Dissipation
- 370 W
- Transistor Type
- HEMT
- Kılıf / Paket
- RF-565
- Seri
- QPD1003
- Parça Durumu
- Obsolete
- Birim Ağırlık
- 3.691596 oz
- Maks. Çalışma Sıcaklığı
- + 85 C
- Ambalaj
- Tray
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Paket Adedi
- 18
- Moisture Sensitive
- Yes
- Minimum Operating Temperature
- - 40 C
- Vds Drainsource Breakdown Voltage
- 50 V
- Montaj Stili
- SMD/SMT
- Development Kit
- QPD1003PCB401
- Gain
- 19.9 dB
- Part Aliases
- 1131389 1131389
- Output Power
- 540 W
- Operating Temperature Range
- - 40 C to + 85 C
- Operating Frequency
- 1.2 GHz to 1.4 GHz
- Id Continuous Drain Current
- 15 A
- Configuration
- Single
- Vgs Th Gatesource Threshold Voltage
- - 2.8 V
- Vgs Gatesource Breakdown Voltage
- 145 V
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