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Specifications
- Part Aliases
- QPD1000TR7
- Operating Temperature Range
- - 40 C to + 85 C
- Output Power
- 24 W
- Gain
- 19 dB
- Kılıf / Paket
- QFN-8
- Transistor Polarity
- N-Channel
- RoHS
- Details
- Development Kit
- QPD1000PCB401, QPD1000PCB402
- Pd Power Dissipation
- 28.8 W
- Transistor Type
- HEMT
- Minimum Operating Temperature
- - 40 C
- Montaj Stili
- SMD/SMT
- Vds Drainsource Breakdown Voltage
- 28 V
- Ambalaj
- Tray
- Moisture Sensitive
- Yes
- Vgs Th Gatesource Threshold Voltage
- - 2.8 V
- Vgs Gatesource Breakdown Voltage
- 100 V
- Configuration
- Single
- Fabrika Paket Adedi
- 750
- Id Continuous Drain Current
- 817 mA
- Maks. Çalışma Sıcaklığı
- + 85 C
- Operating Frequency
- 30 MHz to 1.215 GHz
- Seri
- QPD1000
- Birim Ağırlık
- 0.258417 oz
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