Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Resistor Base R1
- 10 kOhms
- Resistor Emitter Base R2
- 4.7 kOhms
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 250mV
- Yayın Yılı
- 2003
- Tedarikçi Cihaz Paketi
- NS-B1
- Kurşunsuz
- Lead Free
- RoHS Durumu
- RoHS Compliant
- Transistor Type
- NPN - Pre-Biased
- Collectoremitter Breakdown Voltage
- 50V
- Montaj Tipi
- Through Hole
- Max Power Dissipation
- 300mW
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- Kılıf / Paket
- 3-SSIP
- Power Max
- 300mW
- Akım Değeri
- 100mA
- Frequency Transition
- 150MHz
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 5mA 10V
- Voltage Rated Dc
- 50V
- Currentcollector Ic Max
- 100mA
- Current Collector Cutoff Max
- 500nA
- Max Breakdown Voltage
- 50V
- Montaj
- Through Hole
- Max Collector Current
- 100mA
- Ambalaj
- Tape & Box (TB)
- Voltage Collector Emitter Breakdown Max
- 50V
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