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Specifications
- Tedarikçi Cihaz Paketi
- NS-B1
- Yayın Yılı
- 2003
- Current Collector Cutoff Max
- 500nA
- Voltage Collector Emitter Breakdown Max
- 50V
- Ambalaj
- Tape & Box (TB)
- Transistor Type
- NPN - Pre-Biased
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- Kılıf / Paket
- 3-SSIP
- Power Max
- 300mW
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
- Currentcollector Ic Max
- 100mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 5mA 10V
- Frequency Transition
- 150MHz
- Resistor Base R1
- 22 kOhms
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