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Specifications
- Ambalaj
- Tape & Box (TB)
- Transistor Type
- PNP - Pre-Biased
- Voltage Collector Emitter Breakdown Max
- 50V
- Yayın Yılı
- 2011
- Current Collector Cutoff Max
- 1μA
- Resistor Base R1
- 10 k Ω
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 100mA 10V
- Frequency Transition
- 200MHz
- Currentcollector Ic Max
- 500mA
- Resistor Emitter Base R2
- 10 k Ω
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kılıf / Paket
- 3-SSIP
- Vce Saturation Max Ib Ic
- 250mV @ 5mA, 100mA
- Power Max
- 300mW
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