Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Resistor Base R1
- 10 kOhms
- Resistor Emitter Base R2
- 47 kOhms
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 250mV
- Transistor Type
- PNP - Pre-Biased
- Tedarikçi Cihaz Paketi
- NS-B1
- Yayın Yılı
- 2003
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz
- Lead Free
- Voltage Rated Dc
- -50V
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA 10V
- Frequency Transition
- 80MHz
- Currentcollector Ic Max
- 100mA
- Collectoremitter Breakdown Voltage
- 50V
- Montaj Tipi
- Through Hole
- Akım Değeri
- -100mA
- Kılıf / Paket
- 3-SSIP
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- Max Power Dissipation
- 300mW
- Power Max
- 300mW
- Ambalaj
- Tape & Box (TB)
- Voltage Collector Emitter Breakdown Max
- 50V
- Montaj
- Through Hole
- Max Breakdown Voltage
- 50V
- Current Collector Cutoff Max
- 500nA
- Max Collector Current
- 100mA
Related Products
Panjit
2SC164S_R2_00001
Pre-Biased BJT Transistors
Aptina
2SC3402-AC
Pre-Biased BJT Transistors
Renesas Electronics America Inc
2SD1697-AZ
Pre-Biased BJT Transistors
IMP
4245.08.00
Pre-Biased BJT Transistors
IMP
4245.08.01
Pre-Biased BJT Transistors
Nexperia
934055050115
Pre-Biased BJT Transistors
WEIDMÜLLER
9500640000 PCF 7.50/04/180 3.5SN OR BX
Pre-Biased BJT Transistors
Diodes Incorporated
ADA123JUQ-7
Pre-Biased BJT Transistors