Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gate To Source Voltage Vgs
- 8V
- Yükseklik
- 700μm
- Current Continuous Drain Id25
- 4A Ta
- Transistor Element Material
- SILICON
- REACH Uyumluluk Kodu
- unknown
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fabrika Tedarik Süresi
- 10 Weeks
- Drain To Source Voltage Vdss
- 12V
- RoHS Durumu
- RoHS Compliant
- ECCN Kodu
- EAR99
- Power Dissipation
- 700mW
- Drain To Source Breakdown Voltage
- -12V
- Nominal Vgs
- -650 mV
- Genişlik
- 1.7mm
- Continuous Drain Current Id
- -4A
- Çalışma Sıcaklığı
- 150°C TJ
- Uzunluk
- 2mm
- Yayın Yılı
- 2010
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- P-Channel
- Vgs Max
- ±8V
- Drain Currentmax Abs Id
- 4A
- Number Of Elements
- 1
- Vgsth Max Id
- 1V @ 1mA
- Pin Sayısı
- 6
- Direnç
- 42mOhm
- Terminal Sayısı
- 6
- Operating Mode
- ENHANCEMENT MODE
- Kılıf / Paket
- 6-SMD, Flat Leads
- Input Capacitance Ciss Max Vds
- 1200pF @ 10V
- Terminal Pozisyonu
- DUAL
- Power Dissipation Max
- 700mW Ta
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 42m Ω @ 1A, 4V
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
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