DRA2L14Y0L

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Resistor Emitter Base R2

47 k Ω

Vce Saturation Max Ib Ic

1.2V @ 330μA, 50mA

REACH Uyumluluk Kodu

unknown

Collector Emitter Voltage Vceo

-30V

Pin Sayısı

3

HTS Kodu

8541.21.00.95

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Montaj

Surface Mount

Parça Durumu

Discontinued

Max Collector Current

100mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Type

PNP - Pre-Biased

Additional Feature

BUILT IN BIAS RESISITANCE RATIO 4.7

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Polarity

PNP

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Yayın Yılı

2016

Terminal Sayısı

3

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Maks. Çalışma Sıcaklığı

150°C

Collectoremitter Saturation Voltage

-1.2V

Max Breakdown Voltage

30V

Max Power Dissipation

200mW

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

10 Weeks

Collectoremitter Breakdown Voltage

30V

Temel Parça No

DRA2L14

Ambalaj

Tape & Reel (TR)

Genişlik

1.5mm

Yükseklik

1.1mm

RoHS Durumu

RoHS Compliant

Resistor Base R1

10 k Ω

Current Collector Cutoff Max

500nA

Continuous Collector Current

-100mA