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TN3019A

ON Semiconductor

TN3019A

Single BJT Transistors

RoHS: Compliant

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Specifications

Vce Saturation Max Ib Ic
500mV @ 50mA, 500mA
Collector Base Voltage Vcbo
140V
RoHS Durumu
RoHS Compliant
Max Power Dissipation
1W
Voltage Rated Dc
80V
Number Of Elements
1
Ambalaj
Bulk
Pin Sayısı
3
Collector Emitter Voltage Vceo
80V
Montaj
Through Hole
Çalışma Sıcaklığı
-55°C~150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Obsolete
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA 10V
Power Dissipation
1W
Frekans
100MHz
Hfemin
100
Emitter Base Voltage Vebo
7V
Current Collector Cutoff Max
10nA ICBO
Element Configuration
Single
Kurşunsuz
Lead Free
Montaj Tipi
Through Hole
Collectoremitter Saturation Voltage
500mV
Gain Bandwidth Product
100MHz
Transistor Type
NPN
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Kurşunsuz Kodu
yes
Collectoremitter Breakdown Voltage
80V
Weight
250mg
Max Collector Current
1A
Akım Değeri
1A

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