SVD2955T4G

Specifications

Drainsource On Resistancemax

0.18Ohm

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

REACH Uyumluluk Kodu

not_compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Currentmax Idm

18A

Number Of Elements

1

Transistor Element Material

SILICON

Fet Type

P-Channel

Reference Standard

AEC-Q101

Ds Breakdown Voltagemin

60V

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

180m Ω @ 6A, 10V

Vgs Max

±20V

Avalanche Energy Rating Eas

216 mJ

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Yüzey Montaj

YES

Current Continuous Drain Id25

12A Ta

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

4V @ 250μA

Yayın Yılı

2005

Fabrika Tedarik Süresi

22 Weeks

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

750pF @ 25V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

30nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

55W Tj

Drain Currentmax Abs Id

12A

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

60V

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PSSO-G2

Terminal Sayısı

2