SSU1N50BTU

Specifications

Element Configuration

Single

Rds On Max Id Vgs

5.3 Ω @ 650mA, 10V

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

1.3A

Pin Sayısı

3

Drain To Source Breakdown Voltage

520V

Power Dissipation Max

2.5W Ta 26W Tc

Current Continuous Drain Id25

1.3A Tc

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

340pF @ 25V

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn On Delay Time

14 ns

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Turn Off Delay Time

35 ns

Gate Charge Qg Max Vgs

11nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

100 mJ

Pulsed Drain Currentmax Idm

5A

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 1 day ago)

Fet Type

N-Channel

Rise Time

40ns

Parça Durumu

Not For New Designs

Weight

343.08mg

Kurşunsuz Kodu

yes

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgs Max

±30V

Power Dissipation

2.5W

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Montaj Tipi

Through Hole

Ambalaj

Tube

Montaj

Through Hole