Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- -1.5A
- Vce Saturation Max Ib Ic
- 500mV @ 80mA, 800mA
- Montaj Tipi
- Through Hole
- Collector Base Voltage Vcbo
- -40V
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Polaritychannel Type
- PNP
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Terminal Sayısı
- 3
- Yükseklik
- 5.33mm
- Parça Durumu
- Active
- Weight
- 240mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 25V
- Transistor Element Material
- SILICON
- Transition Frequency
- 200MHz
- RoHS Durumu
- ROHS3 Compliant
- Temel Parça No
- SS8550
- Kurşunsuz
- Lead Free
- Yayın Yılı
- 2004
- Fabrika Tedarik Süresi
- 6 Weeks
- ECCN Kodu
- EAR99
- Gain Bandwidth Product
- 200MHz
- Emitter Base Voltage Vebo
- -6V
- Max Power Dissipation
- 1W
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collectoremitter Breakdown Voltage
- 25V
- Frekans
- 200MHz
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 1V
- Voltage Rated Dc
- -25V
- Genişlik
- 4.19mm
- Max Collector Current
- 1.5A
- Max Breakdown Voltage
- 25V
- Current Collector Cutoff Max
- 100nA ICBO
- Çalışma Sıcaklığı
- 150°C TJ
- Number Of Elements
- 1
- Terminal Kaplaması
- Tin (Sn)
- Collectoremitter Saturation Voltage
- -280mV
- Ambalaj
- Tape & Box (TB)
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