Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Transition Frequency
- 190MHz
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 240mg
- Collector Emitter Voltage Vceo
- 25V
- Yükseklik
- 4.58mm
- Emitter Base Voltage Vebo
- 6V
- Fabrika Tedarik Süresi
- 6 Weeks
- Gain Bandwidth Product
- 100MHz
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2007
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Temel Parça No
- SS8050
- Kurşunsuz Kodu
- yes
- JESD-609 Kodu
- e3
- Collector Base Voltage Vcbo
- 40V
- Montaj Tipi
- Through Hole
- Akım Değeri
- 1.5A
- Vce Saturation Max Ib Ic
- 500mV @ 80mA, 800mA
- Terminal Sayısı
- 3
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Montaj
- Through Hole
- Polaritychannel Type
- NPN
- Terminal Pozisyonu
- BOTTOM
- Pin Sayısı
- 3
- Transistor Application
- AMPLIFIER
- Radyasyon Dayanımı
- No
- Transistor Type
- NPN
- Hfemin
- 85
- Power Dissipation
- 1W
- Element Configuration
- Single
- Uzunluk
- 4.58mm
- Voltage Rated Dc
- 25V
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 100mA 1V
- Genişlik
- 3.86mm
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 25V
- Reach Svhc
- No SVHC
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