Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- BOTTOM
- Pin Sayısı
- 3
- Transistor Type
- NPN
- Transistor Application
- AMPLIFIER
- Radyasyon Dayanımı
- No
- Hfemin
- 85
- Uzunluk
- 4.58mm
- Element Configuration
- Single
- Power Dissipation
- 1W
- Genişlik
- 3.86mm
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 1V
- Voltage Rated Dc
- 25V
- Contact Plating
- Tin
- Frekans
- 100MHz
- Reach Svhc
- No SVHC
- Collectoremitter Breakdown Voltage
- 25V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation
- 1W
- Ambalaj
- Tape & Box (TB)
- Collectoremitter Saturation Voltage
- 500mV
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- 150°C TJ
- Max Breakdown Voltage
- 60V
- Current Collector Cutoff Max
- 100nA ICBO
- Max Collector Current
- 1.5A
- Transition Frequency
- 190MHz
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Weight
- 240mg
- Collector Emitter Voltage Vceo
- 25V
- Parça Durumu
- Active
- Yükseklik
- 4.58mm
- Emitter Base Voltage Vebo
- 6V
- ECCN Kodu
- EAR99
- Gain Bandwidth Product
- 100MHz
- Fabrika Tedarik Süresi
- 6 Weeks
- Yayın Yılı
- 2010
- Kurşunsuz
- Lead Free
- Temel Parça No
- SS8050
- RoHS Durumu
- ROHS3 Compliant
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