Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 25
- Emitter Base Voltage Vebo
- 5V
- Dc Current Gain Hfe Min Ic Vce
- 25 @ 30mA 10V
- Terminal Formu
- GULL WING
- Power Dissipation
- 300mW
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material
- SILICON
- Transition Frequency
- 50MHz
- Kurşunsuz
- Lead Free
- Lifecycle Status
- ACTIVE (Last Updated: 19 hours ago)
- Frekans
- 50MHz
- Pin Sayısı
- 3
- Transistor Type
- PNP
- Collectoremitter Breakdown Voltage
- 300V
- Yükseklik
- 1.11mm
- Yüzey Montaj
- YES
- Temel Parça No
- MMBTA92
- ECCN Kodu
- EAR99
- Vce Saturation Max Ib Ic
- 500mV @ 2mA, 20mA
- Kurşunsuz Kodu
- yes
- Contact Plating
- Tin
- Max Collector Current
- 500mA
- Terminal Sayısı
- 3
- Max Power Dissipation
- 300mW
- Terminal Pozisyonu
- DUAL
- Uzunluk
- 3.04mm
- Pin Sayısı
- 3
- Yayın Yılı
- 2010
- Element Configuration
- Single
- Gain Bandwidth Product
- 50MHz
- Reach Svhc
- No SVHC
- Radyasyon Dayanımı
- No
- Max Breakdown Voltage
- 300V
- Current Collector Cutoff Max
- 250nA ICBO
- Ambalaj
- Tape & Reel (TR)
- Collector Base Voltage Vcbo
- 300V
- Genişlik
- 2.64mm
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