SBSS84LT1G

Specifications

Vgs Max

±20V

Fabrika Tedarik Süresi

11 Weeks

Number Of Channels

1

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

1.11mm

Transistor Application

SWITCHING

Terminal Sayısı

3

Rds On Max Id Vgs

10 Ω @ 100mA, 5V

Rise Time

9.7ns

Drive Voltage Max Rds On Min Rds On

5V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

130mA Ta

Pin Sayısı

3

Gate Charge Qg Max Vgs

2.2nC @ 10V

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

50V

Transistor Element Material

SILICON

Montaj

Surface Mount

Vgsth Max Id

2V @ 250μA

Ambalaj

Tape & Reel (TR)

Fall Time Typ

1.7 ns

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Pin Sayısı

3

Yayın Yılı

2012

Power Dissipation Max

225mW Ta

Number Of Elements

1

Max Junction Temperature Tj

150°C

Turn On Delay Time

3.6 ns

Fet Type

P-Channel

Drain To Source Breakdown Voltage

-50V

Turn Off Delay Time

12 ns

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free