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SBCW33LT1G

ON Semiconductor

SBCW33LT1G

Single BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Max Power Dissipation
300mW
Radyasyon Dayanımı
No
Dc Current Gain Hfe Min Ic Vce
420 @ 2mA 5V
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Ambalaj
Tape & Reel (TR)
RoHS Durumu
ROHS3 Compliant
Kurşunsuz
Lead Free
Yüzey Montaj
YES
Yayın Yılı
2011
Kurşunsuz Kodu
yes
ECCN Kodu
EAR99
Fabrika Tedarik Süresi
4 Weeks
Collector Emitter Voltage Vceo
250mV
Collector Base Voltage Vcbo
32V
Çalışma Sıcaklığı
-55°C~150°C TJ
Parça Durumu
Active
Transistor Type
NPN
Vce Saturation Max Ib Ic
250mV @ 500μA, 10mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
32V
Power Max
300mW
Polaritychannel Type
NPN
Terminal Kaplaması
Tin (Sn)
Montaj Tipi
Surface Mount
Seri
Automotive, AEC-Q101
Configuration
Single
Temel Parça No
BCW33
Pin Sayısı
3
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Pin Sayısı
3
Max Collector Current
100mA
JESD-609 Kodu
e3
Current Collector Cutoff Max
100nA ICBO

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