Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Contact Plating
- Tin
- Parça Durumu
- Active
- Transistor Type
- PNP
- Collector Emitter Voltage Vceo
- 65V
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Collector Base Voltage Vcbo
- 80V
- Uzunluk
- 3.04mm
- Terminal Formu
- GULL WING
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 65V
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Frekans
- 100MHz
- Radyasyon Dayanımı
- No
- Dc Current Gain Hfe Min Ic Vce
- 220 @ 2mA 5V
- Max Power Dissipation
- 300mW
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 4 Weeks
- Yayın Yılı
- 2009
- Hfemin
- 220
- Continuous Collector Current
- 100mA
- Ambalaj
- Tape & Reel (TR)
- Yüzey Montaj
- YES
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Max Breakdown Voltage
- 65V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Genişlik
- 2.64mm
- Power Dissipation
- 300mW
- Element Configuration
- Single
- Collectoremitter Saturation Voltage
- -650mV
- Terminal Pozisyonu
- DUAL
- JESD-609 Kodu
- e3
- Current Collector Cutoff Max
- 15nA ICBO
- Max Collector Current
- 100mA
- Pin Sayısı
- 3
- Transition Frequency
- 100MHz
- Transistor Element Material
- SILICON
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