Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 250MHz
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2008
- Power Dissipation
- 625mW
- Montaj
- Through Hole
- Collector Base Voltage Vcbo
- 75V
- Collectoremitter Saturation Voltage
- 400mV
- Transistor Application
- AMPLIFIER
- Gain Bandwidth Product
- 250MHz
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- BOTTOM
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Vce Saturation Max Ib Ic
- 400mV @ 20mA, 200mA
- Transistor Element Material
- SILICON
- Emitter Base Voltage Vebo
- 6V
- Number Of Elements
- 1
- Weight
- 201mg
- Frekans
- 250MHz
- Element Configuration
- Single
- Max Collector Current
- 500mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Rated Dc
- 45V
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Current Collector Cutoff Max
- 50nA
- Collector Emitter Voltage Vceo
- 45V
- Collectoremitter Breakdown Voltage
- 45V
- Collectorbase Capacitancemax
- 4.5pF
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 10mA 1V
- Transistor Type
- NPN
- Terminal Sayısı
- 3
- Temel Parça No
- PN100
- Fabrika Tedarik Süresi
- 15 Weeks
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Vcesatmax
- 0.2 V
- JESD-609 Kodu
- e3
- Ambalaj
- Bulk
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