NVTR4502PT1G

Specifications

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

17.5 ns

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Drain To Source Voltage Vdss

30V

Gate To Source Voltage Vgs

20V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Ambalaj

Tape & Reel (TR)

Number Of Channels

1

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Power Dissipation

400mW

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

19 ns

Fet Type

P-Channel

Vgsth Max Id

3V @ 250μA

Direnç

200MOhm

Input Capacitance Ciss Max Vds

200pF @ 15V

Rds On Max Id Vgs

200m Ω @ 1.95A, 10V

Yayın Yılı

2011

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

1.13A

Transistor Application

SWITCHING

Current Continuous Drain Id25

1.13A Ta

Yüzey Montaj

YES

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation Max

400mW Ta

Number Of Elements

1

Element Configuration

Single

Vgs Max

±20V

JESD-609 Kodu

e3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Drain To Source Breakdown Voltage

-30V

Turn On Delay Time

5.2 ns

Terminal Sayısı

3

Parça Durumu

Active

Kurşunsuz

Lead Free