Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- DUAL
- Vgsth Max Id
- 2.3V @ 250μA
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 19 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 22 ns
- Kurşunsuz Kodu
- yes
- Number Of Channels
- 1
- Ambalaj
- Tape & Reel (TR)
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 8
- Turn On Delay Time
- 10 ns
- Drain To Source Breakdown Voltage
- 60V
- Kılıf / Paket
- 8-PowerWDFN
- Power Dissipation Max
- 3.2W Ta 21W Tc
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Halogen Free
- Halogen Free
- Terminal Kaplaması
- Tin (Sn)
- ECCN Kodu
- EAR99
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 28nC @ 10V
- Terminal Formu
- FLAT
- Rise Time
- 28ns
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 5
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Continuous Drain Current Id
- 29A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2011
- Rds On Max Id Vgs
- 11.5m Ω @ 8.7A, 10V
- Pulsed Drain Currentmax Idm
- 247A
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