NVTFS4C13NWFTWG

Specifications

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

30V

Drain Currentmax Abs Id

40A

Drainsource On Resistancemax

0.0094Ohm

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Drain To Source Voltage Vdss

30V

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Avalanche Energy Rating Eas

10 mJ

REACH Uyumluluk Kodu

not_compliant

Reference Standard

AEC-Q101

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Fet Type

N-Channel

Vgsth Max Id

2.1V @ 250μA

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2014

Rds On Max Id Vgs

9.4m Ω @ 30A, 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

14A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

770pF @ 15V

Pulsed Drain Currentmax Idm

152A

Fabrika Tedarik Süresi

18 Weeks

Case Connection

DRAIN

Current Continuous Drain Id25

14A Ta

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

S-PDSO-F5

Power Dissipation Max

3W Ta 26W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Kılıf / Paket

8-PowerWDFN

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Terminal Formu

FLAT

Gate Charge Qg Max Vgs

15.2nC @ 10V