NVS4001NT1G

Specifications

Transistor Application

SWITCHING

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2006

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Turn Off Delay Time

94 ns

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

8 Weeks

Power Dissipation Max

330mW Ta

Transistor Element Material

SILICON

Vgs Max

±20V

Fet Type

N-Channel

Current Continuous Drain Id25

270mA Ta

Kılıf / Paket

SC-70, SOT-323

Vgsth Max Id

1.5V @ 100μA

Rise Time

23ns

Gate Charge Qg Max Vgs

1.3nC @ 5V

Drainsource On Resistancemax

2Ohm

Pin Sayısı

3

Pin Sayısı

3

Drain Currentmax Abs Id

0.27A

Rds On Max Id Vgs

1.5 Ω @ 10mA, 4V

Continuous Drain Current Id

270mA

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Number Of Elements

1

Input Capacitance Ciss Max Vds

33pF @ 5V

Montaj Tipi

Surface Mount

Power Dissipation

330mW

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

30V

Radyasyon Dayanımı

No

Yüzey Montaj

YES

Fall Time Typ

82 ns

Drive Voltage Max Rds On Min Rds On

2.5V 4V

Parça Durumu

Active

Turn On Delay Time

17 ns

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)