NVMFS6H818NT1G

Specifications

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Number Of Elements

1

Input Capacitance Ciss Max Vds

3100pF @ 40V

Drain Currentmax Abs Id

20A

Rds On Max Id Vgs

3.7m Ω @ 20A, 10V

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101

Terminal Formu

FLAT

Drain To Source Voltage Vdss

80V

Case Connection

DRAIN

Vgs Max

±20V

Fet Type

N-Channel

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

900A

Kılıf / Paket

8-PowerTDFN, 5 Leads

Current Continuous Drain Id25

20A Ta 123A Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0037Ohm

Gate Charge Qg Max Vgs

46nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

80V

Vgsth Max Id

4V @ 190μA

Avalanche Energy Rating Eas

731 mJ

Yayın Yılı

2015

RoHS Durumu

RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

3.8W Ta 136W Tc

Jesd30 Code

R-PDSO-F5

Fabrika Tedarik Süresi

15 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED