NVMFS5C670NLAFT1G

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

17A Ta

Kılıf / Paket

8-PowerTDFN, 5 Leads

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

440A

REACH Uyumluluk Kodu

not_compliant

Vgs Max

±20V

Fet Type

N-Channel

Vgsth Max Id

2V @ 53μA

Ds Breakdown Voltagemin

60V

Tepe Reflow Sıcaklığı (°C)

260

Gate Charge Qg Max Vgs

20nC @ 10V

Drainsource On Resistancemax

0.0088Ohm

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

166 mJ

Lifecycle Status

ACTIVE (Last Updated: 18 hours ago)

Fabrika Tedarik Süresi

4 Weeks

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation Max

61W Tc

Jesd30 Code

R-PDSO-F5

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

Rds On Max Id Vgs

6.1m Ω @ 35A, 10V

Number Of Elements

1

Input Capacitance Ciss Max Vds

1400pF @ 25V

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Case Connection

DRAIN

Drain To Source Voltage Vdss

60V

Terminal Formu

FLAT

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101