NVMFS5A160PLZT3G

Specifications

Avalanche Energy Rating Eas

335 mJ

RoHS Durumu

RoHS Compliant

Yayın Yılı

2015

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

30

Fabrika Tedarik Süresi

38 Weeks

Jesd30 Code

R-PDSO-F5

Power Dissipation Max

3.8W Ta 200W Tc

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Pulsed Drain Currentmax Idm

400A

Transistor Element Material

SILICON

Fet Type

P-Channel

Vgs Max

±20V

Current Continuous Drain Id25

15A Ta 100A Tc

Kılıf / Paket

8-PowerTDFN, 5 Leads

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

160nC @ 10V

Drainsource On Resistancemax

0.0105Ohm

Ds Breakdown Voltagemin

60V

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

2.6V @ 1mA

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Number Of Elements

1

Input Capacitance Ciss Max Vds

7700pF @ 20V

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

7.7m Ω @ 50A, 10V

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101

Terminal Formu

FLAT

Case Connection

DRAIN

Drain To Source Voltage Vdss

60V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL