NVMFS5A160PLZT1G

Specifications

Kılıf / Paket

8-PowerTDFN, 5 Leads

Current Continuous Drain Id25

15A Ta 100A Tc

Vgs Max

±20V

Fet Type

P-Channel

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

400A

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

260

Ds Breakdown Voltagemin

60V

Drainsource On Resistancemax

0.0105Ohm

Gate Charge Qg Max Vgs

160nC @ 10V

Vgsth Max Id

2.6V @ 1mA

Yayın Yılı

2015

RoHS Durumu

RoHS Compliant

Avalanche Energy Rating Eas

335 mJ

Power Dissipation Max

3.8W Ta 200W Tc

Jesd30 Code

R-PDSO-F5

Fabrika Tedarik Süresi

18 Weeks

Tepe Reflow Süresi (maks. sn)

30

Operating Mode

ENHANCEMENT MODE

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Number Of Elements

1

Input Capacitance Ciss Max Vds

7700pF @ 20V

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

7.7m Ω @ 50A, 10V

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Drain To Source Voltage Vdss

60V

Case Connection

DRAIN

Terminal Formu

FLAT