NVMFS5830NLWFT1G

Specifications

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2013

Element Configuration

Single

ECCN Kodu

EAR99

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 4 days ago)

Turn Off Delay Time

40 ns

Fabrika Tedarik Süresi

38 Weeks

Power Dissipation Max

3.8W Ta 158W Tc

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

29A Ta

Kılıf / Paket

8-PowerTDFN

Transistor Element Material

SILICON

Drain To Source Breakdown Voltage

40V

Vgs Max

±20V

Fet Type

N-Channel

Rise Time

32ns

Number Of Channels

1

Vgsth Max Id

2.4V @ 250μA

Pin Sayısı

5

Gate Charge Qg Max Vgs

113nC @ 10V

Drainsource On Resistancemax

0.0036Ohm

Pin Sayısı

5

Rds On Max Id Vgs

2.3m Ω @ 20A, 10V

Continuous Drain Current Id

185A

Gate To Source Voltage Vgs

20V

Number Of Elements

1

Input Capacitance Ciss Max Vds

5880pF @ 25V

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN

Terminal Formu

FLAT

Yüzey Montaj

YES

Radyasyon Dayanımı

No

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

27 ns

Turn On Delay Time

22 ns

Parça Durumu

Active

Kurşunsuz

Lead Free