NVMFS4C03NWFT1G

Specifications

Drainsource On Resistancemax

0.0024Ohm

Gate Charge Qg Max Vgs

45.2nC @ 10V

Pin Sayısı

8

Ds Breakdown Voltagemin

30V

Vgsth Max Id

2.2V @ 250μA

Vgs Max

±20V

Fet Type

N-Channel

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

900A

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

8-PowerTDFN

Current Continuous Drain Id25

31.4A Ta 143A Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

3.71W Ta 77W Tc

Jesd30 Code

R-PDSO-F5

Fabrika Tedarik Süresi

8 Weeks

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Avalanche Energy Rating Eas

549 mJ

Yayın Yılı

2014

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

5

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Kurşunsuz

Lead Free

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Formu

FLAT

Drain To Source Voltage Vdss

30V

Reference Standard

AEC-Q101

Case Connection

DRAIN

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Number Of Elements

1

Input Capacitance Ciss Max Vds

3071pF @ 15V