NVMFS4C01NWFT1G

Specifications

Fet Type

N-Channel

Vgs Max

±20V

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

900A

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

8-PowerTDFN

Current Continuous Drain Id25

49A Ta 319A Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.00095Ohm

Gate Charge Qg Max Vgs

139nC @ 10V

Pin Sayısı

8

Ds Breakdown Voltagemin

30V

Vgsth Max Id

2.2V @ 250μA

Yayın Yılı

2014

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Jesd30 Code

R-PDSO-F5

Power Dissipation Max

3.84W Ta 161W Tc

Fabrika Tedarik Süresi

6 Weeks

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Kurşunsuz

Lead Free

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

10144pF @ 15V

Number Of Elements

1

Continuous Drain Current Id

319A

Rds On Max Id Vgs

0.9m Ω @ 30A, 10V

Terminal Formu

FLAT

Drain To Source Voltage Vdss

30V

Reference Standard

AEC-Q101