NVMFS4C01NT1G

Specifications

Gate Charge Qg Max Vgs

139nC @ 10V

Drainsource On Resistancemax

0.00095Ohm

Ds Breakdown Voltagemin

30V

Pin Sayısı

8

Vgsth Max Id

2.2V @ 250μA

Rise Time

68ns

Number Of Channels

1

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

900A

REACH Uyumluluk Kodu

not_compliant

Vgs Max

±20V

Fet Type

N-Channel

Current Continuous Drain Id25

49A Ta 319A Tc

Kılıf / Paket

8-PowerTDFN

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Fabrika Tedarik Süresi

11 Weeks

Power Dissipation Max

3.84W Ta 161W Tc

Jesd30 Code

R-PDSO-F5

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Turn Off Delay Time

53 ns

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2014

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Kurşunsuz

Lead Free

Fall Time Typ

36 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

Turn On Delay Time

29 ns

Terminal Formu

FLAT

Case Connection

DRAIN

Drain To Source Voltage Vdss

30V

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~175°C TJ