NVJS4405NT1G

Specifications

Turn Off Delay Time

25 ns

Lifecycle Status

ACTIVE (Last Updated: 12 hours ago)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation Max

630mW Ta

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2011

Transistor Application

SWITCHING

Element Configuration

Single

ECCN Kodu

EAR99

Rise Time

4.7ns

Vgsth Max Id

1.5V @ 250μA

Ds Breakdown Voltagemin

25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

6

Gate Charge Qg Max Vgs

1.5nC @ 4.5V

Drainsource On Resistancemax

0.35Ohm

Pin Sayısı

6

Current Continuous Drain Id25

1A Ta

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Transistor Element Material

SILICON

Vgs Max

±8V

Fet Type

N-Channel

Drain To Source Voltage Vdss

25V

Power Dissipation

890mW

Terminal Formu

GULL WING

Yüzey Montaj

YES

Rds On Max Id Vgs

350m Ω @ 600mA, 4.5V

Continuous Drain Current Id

1A

Drain Currentmax Abs Id

1A

Input Capacitance Ciss Max Vds

60pF @ 10V

Number Of Elements

1

Gate To Source Voltage Vgs

8V

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)