NVD5890NT4G

Specifications

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

24A Ta 123A Tc

Pin Sayısı

3

Power Dissipation Max

4W Ta 107W Tc

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Yüzey Montaj

YES

Power Dissipation

2.5W

Drain To Source Voltage Vdss

40V

Yayın Yılı

2011

Terminal Kaplaması

Tin (Sn)

Element Configuration

Single

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgsth Max Id

3.5V @ 250μA

Lifecycle Status

LIFETIME (Last Updated: 1 day ago)

Turn Off Delay Time

39 ns

Ds Breakdown Voltagemin

40V

Drain Currentmax Abs Id

24A

Fabrika Tedarik Süresi

26 Weeks

Input Capacitance Ciss Max Vds

4760pF @ 25V

Turn On Delay Time

14 ns

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

100nC @ 10V

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Continuous Drain Current Id

123A

Montaj Tipi

Surface Mount