NVD5806NT4G

Specifications

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

40V

Avalanche Energy Rating Eas

39 mJ

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

19m Ω @ 15A, 10V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Element Configuration

Single

Continuous Drain Current Id

33A

Vgs Max

±20V

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 day ago)

Vgsth Max Id

2.5V @ 250μA

Radyasyon Dayanımı

No

Kurşunsuz Kodu

yes

Pulsed Drain Currentmax Idm

67A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage Max Rds On Min Rds On

4.5V 10V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Power Dissipation Max

40W Tc

Pin Sayısı

4

Current Continuous Drain Id25

33A Tc

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.019Ohm

Transistor Application

SWITCHING

Yayın Yılı

2012

Terminal Kaplaması

Tin (Sn)

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Gate Charge Qg Max Vgs

38nC @ 10V

Power Dissipation

40W

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Number Of Elements

1