Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 51nC @ 10V
- Fet Type
- N-Channel
- Power Dissipation
- 83W
- Transistor Element Material
- SILICON
- Terminal Kaplaması
- Tin (Sn)
- Yayın Yılı
- 2010
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Jesd30 Code
- R-PSSO-G2
- Fabrika Tedarik Süresi
- 20 Weeks
- Input Capacitance Ciss Max Vds
- 3220pF @ 25V
- Pin Sayısı
- 4
- Number Of Elements
- 1
- Ambalaj
- Tape & Reel (TR)
- Yüzey Montaj
- YES
- Turn On Delay Time
- 12.6 ns
- Terminal Sayısı
- 2
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 85A Tc
- Pin Sayısı
- 4
- Drainsource On Resistancemax
- 0.0057Ohm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 83W Tc
- Turn Off Delay Time
- 28.3 ns
- Vgs Max
- ±20V
- Vgsth Max Id
- 3.5V @ 250μA
- Lifecycle Status
- LIFETIME (Last Updated: 2 days ago)
- Radyasyon Dayanımı
- No
- Pulsed Drain Currentmax Idm
- 228A
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Kurşunsuz Kodu
- yes
- Rise Time
- 21.4ns
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 5.7m Ω @ 50A, 10V
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