NVD5117PLT4G-VF01

Specifications

Drainsource On Resistancemax

0.022Ohm

Current Continuous Drain Id25

11A Ta 61A Tc

Power Dissipation Max

4.1W Ta 118W Tc

Ds Breakdown Voltagemin

60V

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

11A

Input Capacitance Ciss Max Vds

4800pF @ 25V

Fabrika Tedarik Süresi

7 Weeks

Reference Standard

AEC-Q101

Jesd30 Code

R-PSSO-G2

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Drain To Source Voltage Vdss

60V

Fet Type

P-Channel

Gate Charge Qg Max Vgs

85nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Rds On Max Id Vgs

16m Ω @ 29A, 10V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

240 mJ

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Currentmax Idm

419A

Terminal Pozisyonu

SINGLE

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Vgsth Max Id

2.5V @ 250μA