NVD5117PLT4G

Specifications

Vgs Max

±20V

Radyasyon Dayanımı

No

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Avalanche Energy Rating Eas

240 mJ

Contact Plating

Tin

Fall Time Typ

132 ns

Reach Svhc

No SVHC

Rise Time

195ns

Rds On Max Id Vgs

16m Ω @ 29A, 10V

Montaj Tipi

Surface Mount

Continuous Drain Current Id

11A

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

P-Channel

Gate Charge Qg Max Vgs

85nC @ 10V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Turn On Delay Time

22 ns

Number Of Segments

80

Input Capacitance Ciss Max Vds

4.8nF @ 25V

Fabrika Tedarik Süresi

19 Weeks

Threshold Voltage

-1.5V

Ds Breakdown Voltagemin

60V

Drainsource On Resistancemax

0.022Ohm

Turn Off Delay Time

50 ns

Lifecycle Status

LIFETIME (Last Updated: 6 days ago)

Vgsth Max Id

2.5V @ 250μA

Seri

Automotive, AEC-Q101

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Kurşunsuz

Lead Free

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Element Configuration

Single

Yayın Yılı

2009