NVD4810NT4G

Specifications

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

10m Ω @ 30A, 10V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Rise Time

20.7ns

Avalanche Energy Rating Eas

98 mJ

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

30V

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

54A

Element Configuration

Single

Case Connection

DRAIN

Lifecycle Status

LIFETIME (Last Updated: 2 days ago)

Vgsth Max Id

2.5V @ 250μA

Vgs Max

±20V

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

4.5V 11.5V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

9A

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Pin Sayısı

4

Current Continuous Drain Id25

9A Ta 54A Tc

Power Dissipation Max

1.4W Ta 50W Tc

Fet Type

N-Channel

Gate Charge Qg Max Vgs

11nC @ 4.5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Yayın Yılı

2011

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Pin Sayısı

4

Input Capacitance Ciss Max Vds

1350pF @ 12V