NVC3S5A51PLZT1G

Specifications

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Terminal Pozisyonu

DUAL

Vgsth Max Id

2.6V @ 1mA

Vgs Max

±20V

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Drive Voltage Max Rds On Min Rds On

4V 10V

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Rds On Max Id Vgs

250m Ω @ 1A, 10V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e6

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Parça Durumu

Active

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

60V

Fet Type

P-Channel

Gate Charge Qg Max Vgs

6nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Jesd30 Code

R-PDSO-G3

Reference Standard

AEC-Q101

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

262pF @ 20V

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

1.7A

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

1.2W Ta

Ds Breakdown Voltagemin

60V

Drainsource On Resistancemax

0.25Ohm

Transistor Application

SWITCHING

Current Continuous Drain Id25

1.8A Ta