NVATS68301PZT4G

Specifications

Pulsed Drain Currentmax Idm

124A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Vgs Max

±20V

Vgsth Max Id

3.5V @ 1mA

Lifecycle Status

ACTIVE (Last Updated: 14 hours ago)

Terminal Pozisyonu

SINGLE

Seri

Automotive, AEC-Q101

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Avalanche Energy Rating Eas

54 mJ

JESD-609 Kodu

e6

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

75m Ω @ 14A, 10V

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Jesd30 Code

R-PSSO-G2

Fabrika Tedarik Süresi

25 Weeks

Input Capacitance Ciss Max Vds

2850pF @ 20V

Transistor Element Material

SILICON

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

55nC @ 10V

Fet Type

P-Channel

Drain To Source Voltage Vdss

100V

Ds Breakdown Voltagemin

100V

Power Dissipation Max

84W Tc

Current Continuous Drain Id25

31A Ta

Drainsource On Resistancemax

0.075Ohm

Transistor Application

SWITCHING

Drain Currentmax Abs Id

31A

REACH Uyumluluk Kodu

not_compliant