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Specifications
- Gate To Source Voltage Vgs
- 20V
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Continuous Drain Current Id
- 2.48A
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 780mW
- Rise Time
- 20ns
- Akım Değeri
- -2.48A
- Yayın Yılı
- 2001
- Drain To Source Breakdown Voltage
- -30V
- Fall Time Typ
- 20 ns
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Pin Sayısı
- 8
- Terminal Kaplaması
- Tin (Sn)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Turn Off Delay Time
- 40 ns
- Montaj Tipi
- Surface Mount
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 500pF @ 24V
- Pin Sayısı
- 8
- Terminal Pozisyonu
- DUAL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Voltage Vdss
- 30V
- Kurşunsuz
- Lead Free
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Parça Durumu
- Obsolete
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 22nC @ 4.5V
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 3 days ago)
- JESD-609 Kodu
- e3
- Fet Type
- P-Channel
- ECCN Kodu
- EAR99
- Threshold Voltage
- -1.7V
- Voltage Rated Dc
- -30V
- Montaj
- Surface Mount
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Terminal Sayısı
- 8
- Vgsth Max Id
- 3V @ 250μA
- Qualification Status
- Not Qualified
- Reach Svhc
- No SVHC
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