NTTFS5811NLTAG

Specifications

Power Dissipation

33W

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

31nC @ 10V

Genişlik

3.15mm

Kılıf / Paket

8-PowerWDFN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

53A

Jesd30 Code

S-PDSO-F5

Avalanche Energy Rating Eas

65 mJ

Turn On Delay Time

11 ns

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Current Continuous Drain Id25

17A Ta 53A Tc

Rise Time

30ns

Direnç

6.4MOhm

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

1570pF @ 25V

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Nominal Vgs

1.7 V

Fall Time Typ

12 ns

Drain To Source Breakdown Voltage

40V

Number Of Elements

1

Terminal Formu

FLAT

JESD-609 Kodu

e3

Contact Plating

Tin

Pin Sayısı

8

Vgsth Max Id

2.2V @ 250μA

Element Configuration

Single

Parça Durumu

Obsolete

Pin Sayısı

8

Vgs Max

±20V

Uzunluk

3.15mm

RoHS Durumu

RoHS Compliant

Fet Type

N-Channel