NTTFS4H05NTWG

Specifications

Drain To Source Voltage Vdss

25V

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

16 Weeks

Case Connection

DRAIN

Çalışma Sıcaklığı

150°C TJ

Terminal Formu

FLAT

JESD-609 Kodu

e3

Pin Sayısı

8

Ds Breakdown Voltagemin

25V

Vgsth Max Id

2.1V @ 250μA

Gate Charge Qg Max Vgs

18.9nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Currentmax Idm

304A

Parça Durumu

Active

Vgs Max

±20V

Kılıf / Paket

8-PowerWDFN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

94A

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

S-PDSO-F5

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2015

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Current Continuous Drain Id25

22.4A Ta 94A Tc

Terminal Pozisyonu

DUAL

Terminal Sayısı

5

Rds On Max Id Vgs

3.3m Ω @ 30A, 10V

Input Capacitance Ciss Max Vds

1205pF @ 12V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

2.66W Ta 46.3W Tc

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes