Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 8
- Contact Plating
- Tin
- Vgsth Max Id
- 2.2V @ 250μA
- Terminal Formu
- FLAT
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Number Of Elements
- 1
- Drain To Source Breakdown Voltage
- 30V
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 18 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- S-PDSO-F5
- Fet Type
- N-Channel
- Continuous Drain Current Id
- 67A
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Drainsource On Resistancemax
- 0.0061Ohm
- Kılıf / Paket
- 8-PowerWDFN
- Element Configuration
- Single
- Parça Durumu
- Active
- Vgs Max
- ±20V
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 36nC @ 10V
- Gate To Source Voltage Vgs
- 20V
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Surface Mount
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 810mW Ta 31W Tc
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 11A Ta 67A Tc
- Input Capacitance Ciss Max Vds
- 3366pF @ 15V
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 5
- Rds On Max Id Vgs
- 4.2m Ω @ 30A, 10V
- Yüzey Montaj
- YES
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2014
- Operating Mode
- ENHANCEMENT MODE
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