Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pulsed Drain Currentmax Idm
- 192A
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Gate Charge Qg Max Vgs
- 29.4nC @ 10V
- REACH Uyumluluk Kodu
- not_compliant
- Pin Sayısı
- 8
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Kılıf / Paket
- 8-PowerWDFN
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Drainsource On Resistancemax
- 0.0052Ohm
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Continuous Drain Current Id
- 64A
- Avalanche Energy Rating Eas
- 52 mJ
- Fet Type
- N-Channel
- Jesd30 Code
- R-PDSO-F5
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 18 Weeks
- Case Connection
- DRAIN
- Drain To Source Voltage Vdss
- 30V
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Terminal Formu
- FLAT
- Ds Breakdown Voltagemin
- 30V
- Vgsth Max Id
- 2.3V @ 250μA
- Pin Sayısı
- 8
- Kurşunsuz
- Lead Free
- Drain Currentmax Abs Id
- 16.3A
- Terminal Kaplaması
- Tin (Sn)
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2012
- Yüzey Montaj
- YES
- Input Capacitance Ciss Max Vds
- 2075pF @ 15V
- Rds On Max Id Vgs
- 3.5m Ω @ 20A, 10V
- Terminal Sayısı
- 5
- Terminal Pozisyonu
- DUAL
- Current Continuous Drain Id25
- 16.3A Ta 64A Tc
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