NTTFS4939NTWG

Specifications

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

18 Weeks

Case Connection

DRAIN

Drain To Source Voltage Vdss

30V

Number Of Elements

1

Ds Breakdown Voltagemin

30V

Vgsth Max Id

2.2V @ 250μA

Pin Sayısı

8

JESD-609 Kodu

e3

Element Configuration

Single

Parça Durumu

Active

Vgs Max

±20V

Pin Sayısı

8

Kılıf / Paket

8-PowerWDFN

Gate Charge Qg Max Vgs

28nC @ 10V

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

S-XDSO-N5

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

52A

Terminal Pozisyonu

DUAL

Terminal Sayısı

5

Rds On Max Id Vgs

5.5m Ω @ 20A, 10V

Input Capacitance Ciss Max Vds

1979pF @ 15V

Current Continuous Drain Id25

8.9A Ta 52A Tc

Rise Time

20.6ns

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2012

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Yüzey Montaj

YES

Turn On Delay Time

12.2 ns

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Kurşunsuz Kodu

yes

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

850mW Ta 29.8W Tc

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)