NTTFS4939NTAG

Specifications

Number Of Elements

1

Power Dissipation

2.21W

Drain To Source Breakdown Voltage

30V

Fabrika Tedarik Süresi

2 Weeks

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Contact Plating

Tin

Pin Sayısı

8

Vgsth Max Id

2.2V @ 250μA

Gate Charge Qg Max Vgs

28nC @ 10V

Pin Sayısı

8

Vgs Max

±20V

Parça Durumu

Active

Element Configuration

Single

Kılıf / Paket

8-PowerWDFN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

14.3A

Jesd30 Code

S-XDSO-N5

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Yüzey Montaj

YES

Turn On Delay Time

12.2 ns

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2009

Current Continuous Drain Id25

8.9A Ta 52A Tc

Rise Time

20.6ns

Input Capacitance Ciss Max Vds

1979pF @ 15V

Rds On Max Id Vgs

5.5m Ω @ 20A, 10V

Terminal Sayısı

5

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

850mW Ta 29.8W Tc

Gate To Source Voltage Vgs

20V

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Montaj Tipi

Surface Mount