Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 15.5 ns
- Yüzey Montaj
- YES
- Yayın Yılı
- 2006
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 22.6ns
- Current Continuous Drain Id25
- 11A Ta 79A Tc
- Input Capacitance Ciss Max Vds
- 3111pF @ 15V
- Rds On Max Id Vgs
- 4m Ω @ 20A, 10V
- Terminal Sayısı
- 5
- Terminal Pozisyonu
- DUAL
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 850mW Ta 43W Tc
- Ambalaj
- Tape & Reel (TR)
- Gate To Source Voltage Vgs
- 20V
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Surface Mount
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Turn Off Delay Time
- 29 ns
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 1.6V
- Terminal Kaplaması
- Tin (Sn)
- Fall Time Typ
- 4.8 ns
- Number Of Elements
- 1
- Drain To Source Breakdown Voltage
- 30V
- Power Dissipation
- 2.2W
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 18 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Pin Sayısı
- 8
- Vgsth Max Id
- 2.2V @ 250μA
- Gate Charge Qg Max Vgs
- 46.5nC @ 10V
- Drainsource On Resistancemax
- 0.0055Ohm
- Kılıf / Paket
- 8-PowerWDFN
- Element Configuration
- Single
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