NTTFS4930NTWG

Specifications

Number Of Elements

1

Drain To Source Breakdown Voltage

30V

Power Dissipation

2.06W

Fabrika Tedarik Süresi

18 Weeks

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

FLAT

JESD-609 Kodu

e3

Pin Sayısı

8

Vgsth Max Id

2.2V @ 250μA

Gate Charge Qg Max Vgs

5.5nC @ 4.5V

Pulsed Drain Currentmax Idm

45A

Element Configuration

Single

Parça Durumu

Active

Vgs Max

±20V

Pin Sayısı

8

Drainsource On Resistancemax

0.03Ohm

Kılıf / Paket

8-PowerWDFN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

9.6A

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

S-PDSO-F5

Fet Type

N-Channel

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2012

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Current Continuous Drain Id25

4.5A Ta 23A Tc

Rise Time

26.6ns

Input Capacitance Ciss Max Vds

476pF @ 15V

Rds On Max Id Vgs

23m Ω @ 6A, 10V

Terminal Sayısı

5

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

790mW Ta 20.2W Tc

Gate To Source Voltage Vgs

20V

Kurşunsuz Kodu

yes